INVESTIGATION AND DEVELOPMENT OF CONSTRUCTION AND TECHNOLOGICAL BASES FOR PRODUCING SUPER-FAST AND ULTRA-FAST INTEGRATED MICROCIRCUITS FOR ADVANCED GENERATIONS OF SUPER-COMPUTERS AND AUTOMATIC SYSTEMS

Abstract

The object of the investigation is two- and three-dimensional super-integrated bipolar and field transistor structures (TS) based on super- and ultra-thin diffusion and ion-alloyed layers in silicon. An efficient method of analysing and designing bipolar transistor structures with a frequency limit of f*00T=15 divide 53 GHz and on their basis, integrated microcircuits (IMC) with a signal propagation delay time of t*00z*00r=50 divide 10Ps has been developed. To design the TS, high-parameter exponential functions and new relationships between the characteristic parameters of the structures and the level of their alloying have been used. New structural and technological bases used for producing the transistor structures (TS) with an active base region width of 80 to 25 nm and active emitter region depth of 70 to 25 nm have been created. All the elements in the ultra-thin TS are exactly localized with respect to the isolating regions, which is achieved due to the use of the principle of purposeful shaping, with self-matched and selective processes applied. The IMS*00s series 138, 100, 500 and 700 with have been introduced; t*00z*00r=1,9 divide 1,5 ps. The IMS with t*00z*00r=0,5 divide 0,1 ps, have been developed.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio