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DIRECT MAKINGG OF SEMICONDUCTOR QUANTUM WIRES AND POINTS BY METHOD OF MOLECULAR-BEAM EPITAXY

By Anton Yurievich Egorov

Abstract

There the purposes are to study the phenomena of spontaneous formation of nanostructures on the crystal surface in molecular-beam epitaxy in A3B5 joint system, to create on this basis the quantum-dimensional heterostructures with restriction of carriers more than one degree. The new method of epitaxial growing of stressed heterostructures in (In, Ga)As system, which consists in the submonolayer deposition of equilibrium layers of InAs and GaAs in turn, which allows to create the pseudomorphous quantum-dimensional layers with the exceptional uniformity in composition and thickness, with the high effectiveness of radiative recombination, has been offered and has been realized. The new manner to make (In, Ga)As quantum points in common process of epitaxial growing at once, which was based on the transformation of elastostressed layer of (In, Ga)As into the mass of three-dimensional islands, has been realized; the influence of growing variables on the formation process of islands, their structural and luminescent properties have been studied; the optimum modes of growinng have been offered. The single-dimensional quantum clasters on (311) GaAs surface, which may be regarded as the mass of isolated quantum wires, have been madeAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Topics: 20K - Solid-state physics, 09A - Components, ELECTRONICS. RADIO ENGINEERING, PHYSICS
Year: 1996
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Provided by: OpenGrey Repository
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