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PHYSICAL-CHEMICAL BASES OF FORMING HETEROSTRUCTURES WITH LAYERS A*002*99I*99I*99IB*003*99I*99V COMPOUNDS

By Boris Lvovich Agapov

Abstract

The transition heterostructure region investigation methods based on the complex application of the scanning electronic microscopy and roentgen-spectral analysis methods have been developed and applied. The electronic Auger-spectroscopy methods a.o. were used also. The procedures of making think films of the A*002*99I*99I*99IB*003*99I*99V compounds on the semiconductor substrates with applying methods of the heterovalent substitution and deposition from gaseous phase in the quasi-closed volume have been developed. The prototypes of the heterostructures with layers of Ga*002Se*003, In*002Te*003, In*002S*001 and In*001*00,*003Ga*000*00,*007Te*003 compounds with properties permitting to use them in the field MDS-devices have been first made. The introduction of the analytical methods was performed in the Research Institute of Electronic EngineeringAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Topics: 09A - Components, ELECTRONICS, RADIO ENGINEERING
Year: 1992
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Provided by: OpenGrey Repository
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