The investigation objects are the semiconductor plates. The aim of the work is to optimize the chemical preparation and passivation process of surface. The mechanism of forming the passivated surfaces in Si and etching of bases in the aqueous solutions of fluorine-containing acids has been considered. The new procedure in preparation of the Si surface for the ULSI and tunnel-microscopic investigations has been developed. The method for formation of the films by a chemical etching of the bases HF and HBF*004 has been developed. The commercial production of the special superpurity HBF*004 has been adjusted. The surface preparation procedure with finished treatment in HBF*004 has been applied in the Research Institute of Physical Devices. The introduction of the procedure developed has permitted to improve the electrophysical parameters of Si-SiO*002 boundary in the electronic devices of superhigh integration degree. Application field: technology of microelectronicsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio
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