Construction bases of mechanoprocessing adapting flexible production systems for automated plants

Abstract

The investigation is concerned with semiconductors with a narrow prohibited zone A2IV1B2VI1, laminar semiconductors of A2III1B2VI1 type. The object to be attained is elaboration of fundamental basis of physics and material science of semiconductors with a narrow prohibited zone and two-dimensional structures based on laminar semiconductors. The dependence of the value of nonthermal spreading of quantum levels on defects concentration has been established. It has been shown that electron scattering on dipoles of noncentral ions of a various origin causes the increase of electrical resistance with the temperature reduction. The effect is suppressed by the electrical field. The InSe zonal spectrum model has been proposed. The results make it possible to improve the technology of production and alloying of monocrystals, evaluate their structural improvement. The principles of creating the controllable devices of IR engineering and method of control of dimension of current carriers gases in laminar semiconductors have been presented. The field of application covers solid-state physics, physics and technology of semiconductors, material science of microelectronics, IR engineeringAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio