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FORMATION OF SURFACE AT MOLECULE-BEAM EPITAXY OF GERMANIUM AND SILICON AND THEIR SOLID SOLUTIONS

By Vladimir Alexandrovich Markov

Abstract

Purpose of the work: investigation of processes influencing the formation of the surface morphology during homo- and heteroepitaxial growth of films. Fundamentals are determined concerning the mechanism of formation of the surface morphology depending on the conditions of growth of films (temperature, composition). A conclusion is made on the role of the adsorbed atom surface diffusion in the development of the morphology. Conditions are determined for the growth of atom-smooth epitaxial layers. A methodology is proposed for the first time for the control of parameters of the epistructures of any thicknessAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Topics: 20K - Solid-state physics, PHYSICS, ELECTRONICS, RADIO ENGINEERING
Year: 1992
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