Subject of inquiry: radiation-induced and design defects in epitaxial n-GaAs and devices on its basis. The aim of the work is to study processes of radiation-induced defects formation in n-GaAs and properties of some defects by NESGU method as well as the defining of NESGU introduction prospectiveness for investigation of electrically active centers in real semiconductor devices. The bulk volume of work has been fulfilled by NESGU method under constant voltage condition with the usage of the developed and manufactured spectrometer. Drifting disarrangements of crystal lattice at T=300 K are formed in n-GaAs under radiation. The process of multistable defects rearrangements exhibits properties characteristic for second-kind phase transitions. Capture and emission cross-section of charge carriers should not be identified for defects undergoing strong electron-lattice interaction. High efficiency of capacitive spectroscopy implementation for quality control of the devices with bounded dimensions of active region or intricate doping profile as well as when developing production process. The suggested technique of peaks extraction from capacitive spectrum complex section gives the possibility to correctly carry out the investigation of appropriate defectsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio
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