Structures on the base of sillenite crystals and p-i-n structures on the base of weakly alloyed GaAs have been investigated in the paper. As a result the model of processes of the discharge transfer in the volume of high-ohm semiconductors has been established for various conditions of the experiment. Calculations of the field distribution, describing well results of direct measurements, have been executed. The results of the discharge transfer process investigations are important for the creation of optoelectronics devices. Methods for the determination of semiconducting structure parameters, actual for applications, have been suggested on the base of the calculations heldAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio
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