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By Vyacheslav Yurievich Troitsky and The State Scientific Centre - State Enterprise "Scientific-Production Association " Russian Federation)


The design on the temperature change dynamics of the samples and on the kinetics of accumulating defects at intensive irradiation of the silicon have been made. It has been shown in experiment that at high-intensive ion silicon alloying the dynamic recrystallization beginning temperature of the amorphous layer formed on the initial irradiation stage doesn't depend upon the ion type and ion current density; on the boundary of the amorphous and crystalline phases there are the significant mechanical stresses; the synthesis of the dielectric and conducting compounds is performed during irradiation without additional heat treatment; the formation of the anomal and implantation profiles is possible. The obtained results have been used in production process of the IR-range photodetectors on base of the additional silicon.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Topics: 20E - Optics, masers, lasers, 11D - Composites, SURFACE LAYERS, SILICON, HIGH-INTENSIVE ION BEAMS
Year: 1997
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Provided by: OpenGrey Repository
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