Transistor a effet de champ a heterojonction iAlGaAs/nGaAs, a grille isolee et canal dope (DMT). Analyse du fonctionnement et optimisation technologique. Application a l'amplification de puissance microonde


SIGLEINIST T 75085 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

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Last time updated on 14/06/2016

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