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Epitaxie a basse temperature de l'AsGa au moyen de la pulverisation par faisceau d'ions

By 91 - Orsay (France). Inst. d'Electronique Fondamentale Paris-11 Univ. and 75 - Paris (France) Fonds de la Recherche et de la Technologie (FRT)

Abstract

SIGLECNRS AR 10493 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Topics: 20K - Solid-state physics
Year: 1981
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Provided by: OpenGrey Repository
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