Skip to main content
Article thumbnail
Location of Repository

Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

By A.D. Verkerk, M.M. de Jong, J.K. Rath, M. Brinza, R.E.I. Schropp, W.J. Goedheer, V.V. Krzhizhanovskaya, Y.E. Gorbachev, K.E. Orlov, E.M. Khilkevitch and A.S. Smirnov

Abstract

In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by low process temperature. Using an electrostatic ion energy analyzer the effect of deposition temperature on the energies of ions reaching the substrate was measured. The ion energy decreases with decreasing temperature, but this can be compensated by diluting the silane source gas by hydrogen

Year: 2009
OAI identifier: oai:dspace.library.uu.nl:1874/32619
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://dspace.library.uu.nl:80... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.