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Thin film silicon devices deposited at 100 °C: a study on the structural order of the photoactive layer

By J.K. Rath, R.E.I. Schropp, P. Roca i Cabarocas and F.D. Tichelaar

Abstract

The dielectric functions of thin film silicon materials on glass were measured by spectroscopic ellipsometry (SE) and simulated by using the Tauc-Lorentz (TL) dispersion law, which provided information on disorder (C) and density (A). A VHF plasma-deposited sample made at 100 °C with an optimum hydrogen dilution shows density (relative packing density of Si–Si bonds as estimated by SE) and structural disorder that are comparable to samples made at 200 °C. HWCVD materials made at 100 °C at lower hydrogen dilution conditions have a less dense structure and higher roughness compared to the plasma-deposited samples. This can be attributed to the absence of ion bombardment on the growing film. Out of all samples investigated, the HWCVD sample made at a hydrogen to silane flow ratio value of 20 showed a remarkably low structural disorder (C = 1.67) even though the deposition temperature was only 100 °C. A small bond angle variation of 6.4° as determined from its Raman spectrum, the presence of small (1–1.5 nm) dispersed crystalline-like islands in the silicon matrix, and sharp rings in the selective area diffraction pattern point towards a special ordered structure. The photoresponse of this material is >105

Year: 2008
OAI identifier: oai:dspace.library.uu.nl:1874/32678
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