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Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells

By R.E.I. Schropp, R.H. Franken, H.D. Goldbach, Z.S. Houweling, H. B. T. Li, J.K. Rath, J.A. Schuttauf, R.L. Stolk, V. Verlaan and C.H.M. van der Werf

Abstract

We present recent progress on hot-wire deposited thin film solar cells and applications of silicon nitride. The cell efficiency reached for μc-Si:H n–i–p solar cells on textured Ag/ZnO presently is 8.5%, in line with the state-of-the-art level for μc-Si:H n–i–p's for any method of deposition. Such cells, used in triple junction cells together with hot-wire deposited proto-Si:H and plasma-deposited SiGe:H, have reached 10.5% efficiency. The single junction μc-Si:H n–i–p cell is entirely stable under prolonged light soaking. The triple junction cell, including protocrystalline i-layers, is within 3% stable, due to the limited thicknesses of the two top cells. The application of SiNx:H at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cells with 15.7% efficiency. We have also achieved record high deposition rates of 7.3 nm/s for transparent and dense SiNx;H. Hot-wire SiNx:H is likely to be the first large commercial application of the Hot Wire CVD (Cat-CVD) technology

Year: 2008
OAI identifier: oai:dspace.library.uu.nl:1874/32664
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