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Characterization of LPCVD and PECVD silicon oxynitride films

By F.H.P.M. Habraken

Abstract

The chemical composition and structure of silicon oxynitrides, deposited in low pressure and plasma enhanced chemical vapour deposition processes are discussed. From an extrapolation of the characteristics of plasma grown oxynitrides a model for the deposition of LPCVD material is derived. A main conclusion of this model is that Si-Si bonds have a larger tendency to occur in this material than Si dangling bonds

Topics: Scheikunde
Year: 1987
OAI identifier: oai:dspace.library.uu.nl:1874/16356
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