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Electrical Properties of Transparent Doped Titania Films by Sol-Gel Method (SOLID STATE CHEMISTRY-Amorphous Materials)

By Hong Lin, Takashi Uchino, Hiromitsu Kozuka and Toshinobu Yoko

Abstract

Transparent semiconductive TiO2 films co-doped with Ru and Ta (Nb), and Co and Nb (Sb) were prepared on SiO2 glass substrates by the sol-gel method using Ti(OC3H7 i)4 solutions. The solution preparation condition, solution composition, dopant content and heat-treatment temperature all severely affected the electrical resistivity of the resultant films. TiO2 films co-doped with Ru and Ta (Nb) showed n-type conductivity, while those co-doped with Co and Nb (Sb) showed p-type conductivity. It seems that the obtained films can be utilized for assembling all-solid-state TiO2-based pn type solar cell

Topics: Transparent semiconductive films, Sol-gel method, Titania films, Electrical resistivity, pn type solar cell, 430
Publisher: Institute for Chemical Research, Kyoto University
Year: 1998
OAI identifier: oai:repository.kulib.kyoto-u.ac.jp:2433/65157
Journal:

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