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Deep level defects in electron irradiated ZnO single crystal studied by deep level transient spectroscopy

By ZQ Zhong, XH Lu and CC Ling

Abstract

Session B: Semiconducting oxidesUndoped melt grown n-type ZnO single crystal (n1016cm-3) was irradiated by 1.7-MeV electrons with fluence of 1014 cm-2 followed by post-irradiation annealing. Au Schottky contacts were thermally evaporated onto the samples with hydrogen peroxide pre-treatment. Deep level transient spectroscopy measurement was used to investigate the deep traps induced by the electron irradiation. The dominant trap in the as-grown ZnO single crystal has the activation energy of 0.28eV. The electron irradiation introduced an extra trap having the activation energy of 0.16eV. Thermal annealing study was also performed to study the thermal evolution of these deep level defects.The 2010 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland, 13-17 September 2010

Publisher: European Materials Research Society.
Year: 2010
OAI identifier: oai:hub.hku.hk:10722/127150
Provided by: HKU Scholars Hub
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