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Structural characterization of femtosecond laser modified regions inside sapphire

By Saulius Juodkazis, Shinji Kohara, Yasuo Ohishi, Norihisa Hirao, Arturas Vailionis, Vygantas Mizeikis, Akira Saito and Andrei Rode

Abstract

We report on structural characterization of sapphire photomodified by voids of sub-wavelength diameter surrounded by amorphised regions formed after exposure by tightly-focused femtosecond laser pulses of 800 nm wavelength and 150 fs duration at the single and double-pulse irradiation inside crystalline sapphire. Regrowth of a crystalline phase near the edge between the amorphous and crystalline phases was observed by transmission electron microscopy (TEM) in the case of double-pulse-irradiated locations. Regions patterned by single-pulse-induced voids inside sapphire were characterized by synchrotron X-ray diffraction (XRD) technique. The XRD patterns indicate presence of an expanded phase of the host crystal. The origin of structural changes observed in TEM and XRD is discussed and is consistent with fast thermal quenching

Topics: Femtosecond laser nano-/micro-fabrication, Nano-structured materials, Phase transitions, Sapphire, 0912 Materials Engineering, 1007 Nanotechnology
Publisher: American Scientific Publishers
Year: 2011
DOI identifier: 10.1166/jnn.2011.3919
OAI identifier: oai:vtl.cc.swin.edu.au:swin:21101
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