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Microstructure and microhardness of SiC films prepared by gas tunnel type plasma spraying method

By N. F. Fahim and A. Kobayashi

Abstract

Polycrystalline silicon carbide (SiC) films had been deposited on stainless steel substrate by gas tunnel type plasma spraying method. The effect of plasma arc current, plasma gas composition and carrier gas flow rate on the microstructure and microhardness properties was investigated. Microstructure properties were examined using scanning electron microscope (SEM), x-ray diffractometer (XRD) and energy dispersive spectroscopy (EDS). Microhardness was carried out by using Vickers hardness indenter. The microstructure results showed that the SiC films compact, dense, adhere-well, and free from pores. However, the microhardness of sprayed SiC films has been improved significantly as a function of carrier gas flow rate and plasma arc current. The SiC films have a hardness of 1694-2285 Hv along the surface. Thus, SiC fabricated by gas tunnel type plasma spraying method offer excellent chemical and mechanical properties and are, therefore, well suited for high-power device fabrication

Topics: Gas tunnel type plasma spraying, High power applications, Microhardness properties, Microstructure, Silicon carbide
Publisher: Plasma Applied Science
Year: 2006
OAI identifier: oai:vtl.cc.swin.edu.au:swin:18549
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