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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

By P. O. Nilsson, J. Kanski, J. V. Thordson, T. G. Andersson, J. Nordgren, J. Guo and Martin Magnuson

Abstract

It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.Original Publication:P. O. Nilsson, J. Kanski, J. V. Thordson, T. G. Andersson, J. Nordgren, J. Guo and Martin Magnuson, Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission, 1995, Physical Review B. Condensed Matter and Materials Physics, (52), R8643-R8645.http://dx.doi.org/10.1103/PhysRevB.52.R8643Copyright: American Physical Societyhttp://www.aps.org

Topics: Natural Sciences, Naturvetenskap, Biological Sciences, Biologiska vetenskaper
Publisher: 'American Physical Society (APS)'
Year: 1995
DOI identifier: 10.1103/PhysRevB.52.R8643
OAI identifier: oai:DiVA.org:liu-17476
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