Article thumbnail

Friction force microscopy characterization of semiconductor heterostructures

By Francisco Javier Tamayo de Miguel and Ricardo García García

Abstract

Measurement of frictional forces in a scanning force microscopy has been applied to perform compositional characterization of semiconductor heterostructures. Semiconductor interfaces as well as multiquantum wells are resolved with 3 nm of spatial resolution. The chemical sensitivity of this method is studied by imaging a step graded Incursive chiGa1-cursive chiAs sample. Changes of 10% in indium (or gallium) composition are detected. These results point out the potential of friction force microscopy for simultaneous topography and compositional characterization of semiconductor materials.DGICYT PB94-0016Peer Reviewe

Publisher: Elsevier
Year: 2012
DOI identifier: 10.1016/S0921-5107(96)01692-3
OAI identifier: oai:digital.csic.es:10261/52521
Provided by: Digital.CSIC
Journal:
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://hdl.handle.net/10261/52... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.