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Friction force microscopy characterization of semiconductor heterostructures

By Francisco Javier Tamayo de Miguel and Ricardo García García


Measurement of frictional forces in a scanning force microscopy has been applied to perform compositional characterization of semiconductor heterostructures. Semiconductor interfaces as well as multiquantum wells are resolved with 3 nm of spatial resolution. The chemical sensitivity of this method is studied by imaging a step graded Incursive chiGa1-cursive chiAs sample. Changes of 10% in indium (or gallium) composition are detected. These results point out the potential of friction force microscopy for simultaneous topography and compositional characterization of semiconductor materials.DGICYT PB94-0016Peer Reviewe

Publisher: Elsevier
Year: 2012
DOI identifier: 10.1016/S0921-5107(96)01692-3
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Provided by: Digital.CSIC
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