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高电荷态离子与Si(110)晶面碰撞的沟道效应研究

By 彭海波, 王铁山, 韩运成, 丁大杰, 徐鹤, 程锐, 赵永涛 and 王瑜玉

Abstract

不同电荷态低速离子(Arq+,Pbq+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额.通过比较溅射产额与入射角的关系,证实沟道效应的存在.高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的.在小角入射条件下,高电荷态离子能够增大溅射产额.当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应

Topics: 高电荷态离子, 溅射, 沟道效应
Year: 2008
OAI identifier: oai:ir.impcas.ac.cn:113462/2487
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