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GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

By P. Kordos, Alfred Fox, R Kúdela, Martin Mikulics, R Stoklas and D Gregušová
Topics: info:eu-repo/classification/ddc/530
Publisher: IOP Publ.
Year: 2012
DOI identifier: 10.1088/0268-1242/27/11/115002
OAI identifier: oai:juser.fz-juelich.de:127093
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