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Electronegativity and point defect formation in the ion implanted SiO2 layers

By S. Prucnal, J. M. Sun, H. Reuther, C. Buchal, J. Zuk and W. Skorupa

Abstract

The metal-oxide-silicon (MOS) diode structure containing ion:implanted electropositive:(M+) and electronegative (M-) ions is one of the most promising candidates for a new type of high-efficiency electroluminescence (EL) devices which can be integrated with standard silicon CMOS technology. The implantation process creates defects in the SiO2 layer. After implantation, anannealing process leads to the diffusion of implanted elements and broadening,of the SiO2/Si interface. The influence of different implanted ions (Gd, F, K) was investigated by EL measurements and correlated to different defects in the oxide layer. Implanted electronegative ions (such as F) lead to defects comprising O-2 molecules and peroxy radicals (POR). On the other hand, electropositive ions (Gd and K) increase the number of oxygen vacancy defects. (c) 2007 Published by Elsevier Ltd

Topics: info:eu-repo/classification/ddc/530, J, ion implantation, electronegativity, point defect, SiO2/Si interface
Publisher: Elsevier Science
Year: 2007
DOI identifier: 10.1016/j.vacuum.2007.01.032
OAI identifier: oai:juser.fz-juelich.de:61878
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