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Fabrication and Characterisation of GaAs Gunn Diode Chips for Application at 77 Ghz in Automotive Instustry

By A. Förster, J. Stock, S. Montanari, M. I. Lepsa and H. Lüth

Abstract

GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW

Topics: info:eu-repo/classification/ddc/620, J, Gunn diode, microwave generation, GaAs hot electron injector
Publisher: MDPI
Year: 2006
OAI identifier: oai:juser.fz-juelich.de:55058
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