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Photomixers fabricated on nitrogen-ion-implanted GaAs

By V. V. Mikulics, M. Marso, E. A. Michael, R. Schieder, M. Wolter, D. Buca, A. Förster, P. Kordos, H. Lüth, I. Cámara Mayorga, R. Güsten, S. Stancek, P. Kovac, S. Wu, X. Li, M. Khafizov and R. Sobolewski


We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of similar to 3x10(12) cm(-2). The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts (photomixers fabricated on low-temperature-grown GaAs) the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers. (c) 2005 American Institute of Physics

Topics: info:eu-repo/classification/ddc/530, J
Publisher: American Institute of Physics
Year: 2005
DOI identifier: 10.1063/1.2006983
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