10.1016/j.sse.2014.04.027

Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit

Abstract

This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that intrinsically, UTBB device can reach very high cut-off frequency (fT) provided the reduction of parasitic elements. In addition, based on device simulation, we demonstrate that with appropriate configuration, Asymmetric Double Gate (ADG) regime provides a slight improvement of RF figures-of-merit

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oai:dial.uclouvain.be:boreal:144273Last time updated on 5/14/2016

This paper was published in DIAL UCLouvain.

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