Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit


This work details the harmful effect of parasitic resistances and capacitances on RF figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is demonstrated that intrinsically, UTBB device can reach very high cut-off frequency (fT) provided the reduction of parasitic elements. In addition, based on device simulation, we demonstrate that with appropriate configuration, Asymmetric Double Gate (ADG) regime provides a slight improvement of RF figures-of-merit

Similar works

Full text

oai:dial.uclouvain.be:boreal:144273Last time updated on 5/14/2016

This paper was published in DIAL UCLouvain.

Having an issue?

Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.