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Passively mode-locked diode-pumped surface-emitting semiconductor laser

By S. Hoogland, S. Dhanjal, A.C. Tropper, J.S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud and U. Keller


A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22 ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz

Topics: QC
Year: 2000
OAI identifier: oai:eprints.soton.ac.uk:15019
Provided by: e-Prints Soton

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