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Passively mode-locked diode-pumped surface-emitting semiconductor laser

By S. Hoogland, S. Dhanjal, A.C. Tropper, J.S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud and U. Keller

Abstract

A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22 ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz

Topics: QC
Year: 2000
OAI identifier: oai:eprints.soton.ac.uk:15019
Provided by: e-Prints Soton

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Citations

  1. (1999). Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular
  2. (1997). High-power (>0.5-W CW) diode-pumped vertical-external cavity surface-emitting semiconductor lasers with circular
  3. (1992). Mode-locked GaAs vertical cavity surface emitting lasers,”
  4. (1996). Mode-locking at very high repetition rates more than terahertz in passively mode-locked distributedBragg-reflector laser diodes,”
  5. (1996). Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid state lasers,”
  6. (1992). Solid-state low-loss intracavity saturable absorber for Yd:YLF lasers: An antiresonant semiconductor Fabry–Perot saturable absorber,”
  7. (1991). Sub-100 femtosecond pulses from an external-cavity surface-emitting InGaAs/InP multiple quantum well laser with soliton-effect compression,”
  8. (1998). Wide-range tunable semiconductor lasers using asymmetric dual quantum wells,”

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