10.1103/PhysRevB.101.165303

Tunneling spectroscopy of localized states of WS2 barriers in vertical van der Waals heterostructures

Abstract

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here we study localized states in WS2 and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/ WS2/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted.QRD/Goswami LabQN/van der Zant LabQN/Steele La

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This paper was published in TU Delft Repository.

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