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Interplay between Auger and ionization processes in nanocrystal quantum dots

By Robert M. Kraus, Pavlos G. Lagoudakis, Josef Muller, Andrey L. Rogach, John M. Lupton, Jochen Feldmann, Dimitri V. Talapin and Horst Weller

Abstract

We study the interplay between Auger effects and ionization processes in the limit of strong electronic confinement in core/shell CdSe/ZnS semiconductor nanocrystal quantum dots. Spectrally resolved fluorescence decay measurements reveal a monotonic increase of the photoluminescence decay rate on excitation density. Our results suggest that Auger recombination accelerates ionization processes that lead to the occupation of dark, nonemissive nanocrystal states. A model is proposed in the quantized Auger regime describing these experimental observations and providing an estimate of the Auger assisted ionization rates

Topics: QC
Year: 2005
OAI identifier: oai:eprints.soton.ac.uk:19271
Provided by: e-Prints Soton

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Citations

  1. (1997). Optical Properties of Semiconductor Quantum Dots;
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  3. (1996). Science

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