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Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors

By Paddy K. L. Chan, Kevin P. Pipe, Guoxuan Qin and Zhenqiang Ma

Abstract

By generating high resolution two dimensional temperature images of electronic devices and linking heat dissipation to electrical current, the authors demonstrate that thermoreflectance measurements employing a charge-coupled device can provide a useful and nondestructive method for profiling current density in electronic devices. Here they apply this method to high power SiGe heterojunction bipolar transistors (HBTs) integrated in a commercial SiGe bipolar complementary metal-oxide-semiconductor platform, measuring the current carried by each subcell and quantifying current collapse under high-bias operation. They show that current hogging for a HBT with two emitter subcells can lead to one subcell carrying 81% of the total current

Publisher: The American Institute of Physics
Year: 2006
DOI identifier: 10.1063/1.2402947
OAI identifier: oai:deepblue.lib.umich.edu:2027.42/87814

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