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Ferromagnetic interlayer exchange coupling in semiconductor SbCrTe/Sb2Te3/SbCrTeSbCrTe∕Sb2Te3∕SbCrTe trilayer structures

By Zhenhua Zhou, Yi-Jiunn Chien and Ctirad Uher

Abstract

Semiconductor trilayer structures with ferromagnetic Sb2−xCrxTe3Sb2−xCrxTe3 layers separated by a nonmagnetic Sb2Te3Sb2Te3 layer of different thickness have been fabricated by molecular beam epitaxy. Ferromagnetic out-of-plane exchange coupling between the SbCrTe layers was found and the coupling strength, which can be represented by a saturation field HSHS, depends on both the Sb2Te3Sb2Te3 spacer thickness and temperature

Publisher: The American Institute of Physics
Year: 2006
DOI identifier: 10.1063/1.2398905
OAI identifier: oai:deepblue.lib.umich.edu:2027.42/87813
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