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Carrier-mediated ferromagnetism in vanadium-doped (Sb1−xBix)2Te3(Sb1−xBix)2Te3 solid solutions

By Zhenhua Zhou, Ctirad Uher, Marek Zabcik and Petr Lostak

Abstract

Ferromagnetism in tetradymite-type diluted magnetic semiconductors (Sb1−xBix)1.98V0.02Te3(Sb1−xBix)1.98V0.02Te3 (0 ⩽ x ⩽ 1)(0⩽x⩽1) is revealed to be of hole-mediated nature. The increasing replacement of antimony with bismuth results in a monotonous decrease of the hole concentration and the Curie temperature while the electrical resistivity increases. The value of the Curie temperature shows a linear dependence of Np1/3Np1∕3, where NN is the vanadium concentration and pp is the concentration of hole. This trend agrees with the mean-field theory predictions

Publisher: The American Institute of Physics
Year: 2006
DOI identifier: 10.1063/1.2200738
OAI identifier: oai:deepblue.lib.umich.edu:2027.42/87768
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