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Stress evolution in GaAsN alloy films

By M. Reason, X. Weng, W. Ye, D. Dettling, S. Hanson, G. Obeidi and R. S. Goldman


We have investigated stress evolution in dilute nitride GaAs1−xNxGaAs1−xNx alloy films grown by plasma-assisted molecular-beam epitaxy. For coherently strained films (x<2.5%)(x<2.5%), a comparison of stresses measured via in situ wafer curvature measurements, with those determined from x-ray rocking curves using a linear interpolation of lattice parameter and elastic constants, suggests significant bowing of the elastic properties of GaAsN. The observed stress differences are used to quantify the composition-dependent elastic constant bowing parameters. For films with x>2.5%x>2.5%, in situ wafer curvature measurements reveal a signature for stress relaxation. Atomic force microscopy and transmission electron microscopy measurements indicate that stress relaxation occurs by a combination of elastic relaxation via island formation and plastic relaxation associated with the formation of stacking faults

Publisher: The American Institute of Physics
Year: 2005
DOI identifier: 10.1063/1.1900289
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