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Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation

By Manish Rana, Ramon Canal Corretger, Esteve Amat Bertran and Jose Antonio Rubio Sola

Abstract

Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines minimum-energy operation of 2T and 3T1D e-DRAM gain cells as an alternative to SRAM at 32nm technology node with different design points: up-sizing transistors, using high-Vth transistors, read/write wordline assists and temperature. First, the e-DRAM cells are evaluated without considering any process variations. The design-space is explored by creating a kriging meta-model to reduce the number of simulations. Finally, a full-factorial statistical analysis of e-DRAM cells is performed in presence of threshold voltage variations. The effect on mean MEP is also reported.Peer Reviewe

Topics: Àrees temàtiques de la UPC::Informàtica::Arquitectura de computadors, Wearable technology -- Energy consumption, DRAM chips, Energy conservation, SRAM chips, Statistical analysis, 2T1D e-DRAM, 3T1D e-DRAM, Biomedical wearable device, Embedded-battery, Energy-efficiency, Minimum-energy point, MEP, Subthreshold voltages, SRAM memory, Noise margins, Minimum energy operation, Kriging metamodel, Threshold voltage variation, Size 32 nm, Ordinadors portables -- Consum d'energia
Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2016
DOI identifier: 10.1109/IOLTS.2016.7604667
OAI identifier: oai:upcommons.upc.edu:2117/97275
Provided by: UPCommons
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