The effective mass and the


The effective mass m*, and the Landé g-factor of the uniform 2D electron system (2DES) are calculated as a function of the spin polarization ζ, and the density parameter rs, using a non-perturbative analytic approach. Our theory is in good accord with the susceptibility data for the simple 2DES, and in excellent agreement with the two-valley $\chem{Si}$-2DES data of Shashkin et al.  While g* is enhanced in $\chem{GaAs}$, m* is enhanced in $\chem{Si}$. The two-valley susceptibility is treated within a coupled-mode (coupled-valley) approach. The coupled-valley model is confirmed by comparison with the Quantum Monte Carlo results for a 4-component 2DES

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