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Nano and microscale thermal transport experimental measurements

By D. Fournier, C. Filloy, S. Holé, J.P. Roger and G. Tessier

Abstract

Modern Silicon microelectronic components are nowadays in the nanometer scale regime. The thermal transport can be modified by the close proximity of interfaces and the extremely small volume of heat dissipation. The thermal management being more and more difficult to achieve, strong efforts have been done both on theoretical and experimental points of view. In this paper we will discuss the advances in measurement methods such as: Raman and photoluminescence spectroscopies, modulated thermoreflectance set-ups and scanning thermal microscopy which enable new capabilities for nanometer and micrometer scale thermal metrology. The optical methods will be presented and discussed in details, specially their lateral resolution, and their sensitivity for thermal mapping and thermal properties determination. The paper will be illustrated with examples taken in the microelectronics and material science fields

Publisher: EDP Sciences
DOI identifier: 10.1051/jp4:2005125115
OAI identifier: oai:edpsciences.org:dkey/10.1051/jp4:2005125115
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