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Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end element

By M. Citterio and P.F. Manfredi

Abstract

The noise behavior of monolithic preamplifiers using JFETs as input elements has been investigated on a broad temperature range, from room temperature down to 77 K. The preamplifiers under study are charge integrators intended for use with radiation detectors. The parameter of dominant interest in the analysis is the equivalent noise charge (ENC). The investigation addresses two issues. One is the ENC dependence on temperature. The other one is the extent to which ENC is affected when the preamplifiers are irradiated in cryogenic conditions

Publisher: EDP Sciences
DOI identifier: 10.1051/jp4:1998334
OAI identifier: oai:edpsciences.org:dkey/10.1051/jp4:1998334
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