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Negative differential resistance in GaN nanocrystals above room temperature

By Basant Chitara, D. S. Ivan Jebakumar, C. N. R. Rao and S. B. Krupanidhi

Abstract

Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ~7 V above room temperature

Topics: QC Physics
Publisher: 'IOP Publishing'
Year: 2009
DOI identifier: 10.1088/0957-4484/20/40/405205
OAI identifier: oai:repository.ias.ac.in:19184
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