Antimony germanium sulphide (Sb-Ge-S) amorphous thin films have been directly fabricated on both silica on silicon and commercial glass substrates by means of chemical vapour deposition. These Sb-Ge-S films have been characterized by micro-Raman, scanning electron microscopy and energy dispersive X-ray analysis techniques. The analysis results for these amorphous films indicate the composition of Sb-Ge-S can be varied by changing the deposition temperatures. The quality of these Sb-Ge-S amorphous thin films gives them high potential for the chalcogenide optical waveguide and device applications
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