Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

T. Ferrus; D. G. Hasko; Q. R. Morrissey; S. R. Burge; E. J. Freeman; M. J. French; A. Lam; L. Creswell; R. J. Collier; D. A. Williams; G. A. D. Briggs

doi:10.1063/1.3191671

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

By T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams and G. A. D. Briggs

Publisher: AIP Publishing

Year: 2009

DOI identifier: 10.1063/1.3191671

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Provided by: MUCC (Crossref)

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Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

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