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Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties

By V.S. Waman, M.M. Kamble, M.R. Pramod, A.M. Funde, V.G. Sathe, S.W. Gosavi and S.R. Jadkar

Abstract

Thin films of hydrogenated nanocrystalline silicon are prepared at reasonably higher deposition rates (9-13 Å/s) by indigenously fabricated hot-wire chemical vapor deposition system at various substrate temperatures (Ts). In this paper we report extensively studied structural, optical and electrical properties of these films by Fourier transform infrared (FTIR) spectroscopy, low angle X-ray diffraction (low angle XRD), micro-Raman spectroscopy and UV-Visible spectroscopy. The low angle XRD and micro-Raman spectroscopy analysis indicate amorphous-to-nanocrystalline transition occurred at Ts = 300 °C. It is observed that volume fraction of crystallites and its size increases with increase in Ts. The low angle XRD study also shows nc-Si:H films with well-identified lattice planes of (111) orientation. In addition, it is observed from the FTIR spectroscopy that the hydrogen is incorporated in the film mainly in Si-H2 and (Si-H2)n complexes. The nc-Si:H films with low hydrogen content (< 4 at. %) and wide band gap (1.83-1.89 eV) and low refractive index (< 3) is useful for various device applications

Topics: Hot Wire Chemical Vapor Deposition, Nanocrystalline Silicon Thin Films, Structural Properties, Optical Properties, Electrical Properties, LCC:Electricity and magnetism, LCC:QC501-766, LCC:Physics, LCC:QC1-999, LCC:Science, LCC:Q, DOAJ:Electricity, DOAJ:Physics (General), DOAJ:Physics and Astronomy
Publisher: Sumy State University
Year: 2011
OAI identifier: oai:doaj.org/article:7209c606facb4eaaa510e2630816011b
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