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Analysis of heavily boron-doped diamond Raman spectrum

By V. Mortet, A. Taylor, Z. Vlčková Živcová, D. Machon, O. Frank, P. Hubík, David Trémouilles and L. Kavan


International audienceLattice disorder, electronic Raman scattering, and Fano interaction effects are at the genesis of the Raman spectrum of heavily boron-doped diamond. However, no accurate unified description of this spectrum has been reported yet. In this work, we propose a novel analysis of the Raman spectrum of boron-doped diamond based on classical models of electronic Raman scattering and Fano effect. This new analysis shows that the Raman spectrum of boron-doped diamond results from the combination of electronic Raman scattering and its interaction, i.e. Fano effect, with the diamond phonon density of states and it confirms the 500 cm −1 and 1200 cm −1 bands originate from the phonon density of states

Topics: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Publisher: 'Elsevier BV'
Year: 2018
DOI identifier: 10.1016/j.diamond.2018.07.013
OAI identifier: oai:HAL:hal-01956849v1
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