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Improved micro-contact resistance model that considers material deformation, electron transport and thin film characteristics

By John W. McBride, Ronald A. Coutu and LaVern A. Starman

Abstract

This paper reports on an improved analytic model for<br/>predicting micro-contact resistance needed for designing microelectro-<br/>mechanical systems (MEMS) switches. The original<br/>model had two primary considerations: 1) contact material<br/>deformation (i.e. elastic, plastic, or elastic-plastic) and 2) effective<br/>contact area radius. The model also assumed that individual aspots<br/>were close together and that their interactions were<br/>dependent on each other which led to using the single effective aspot<br/>contact area model. This single effective area model was<br/>used to determine specific electron transport regions (i.e. ballistic,<br/>quasi-ballistic, or diffusive) by comparing the effective radius and<br/>the mean free path of an electron. Using this model required that<br/>micro-switch contact materials be deposited, during device<br/>fabrication, with processes ensuring low surface roughness values<br/>(i.e. sputtered films). Sputtered thin film electric contacts,<br/>however, do not behave like bulk materials and the effects of thin<br/>film contacts and spreading resistance must be considered. The<br/>improved micro-contact resistance model accounts for the two<br/>primary considerations above, as well as, using thin film,<br/>sputtered, electric contact

Topics: QC, TK
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Year: 2009
OAI identifier: oai:eprints.soton.ac.uk:69144
Provided by: e-Prints Soton

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