This paper reports on an improved analytic model for<br/>predicting micro-contact resistance needed for designing microelectro-<br/>mechanical systems (MEMS) switches. The original<br/>model had two primary considerations: 1) contact material<br/>deformation (i.e. elastic, plastic, or elastic-plastic) and 2) effective<br/>contact area radius. The model also assumed that individual aspots<br/>were close together and that their interactions were<br/>dependent on each other which led to using the single effective aspot<br/>contact area model. This single effective area model was<br/>used to determine specific electron transport regions (i.e. ballistic,<br/>quasi-ballistic, or diffusive) by comparing the effective radius and<br/>the mean free path of an electron. Using this model required that<br/>micro-switch contact materials be deposited, during device<br/>fabrication, with processes ensuring low surface roughness values<br/>(i.e. sputtered films). Sputtered thin film electric contacts,<br/>however, do not behave like bulk materials and the effects of thin<br/>film contacts and spreading resistance must be considered. The<br/>improved micro-contact resistance model accounts for the two<br/>primary considerations above, as well as, using thin film,<br/>sputtered, electric contact
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