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Nonstoichiometry in TiO2−y Studied by Ion Beam Methods and Photoelectron Spectroscopy

By K. Zakrzewska

Abstract

This paper treats a problem of nonstoichiometry in TiO2−y thin films deposited by reactive sputtering at controlled sputtering rates. Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometry y in the bulk and at the surface of TiO2−y layers. The critical review of these experimental methods is given. Defect structure responsible for the electrical resistivity of rutile TiO2 is discussed

Topics: Materials of engineering and construction. Mechanics of materials, TA401-492
Publisher: Hindawi Limited
Year: 2012
DOI identifier: 10.1155/2012/826873
OAI identifier: oai:doaj.org/article:d7410ba5fcb44653b1b2c7ef5659b1bc
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