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Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy

By S. Kadkhodazadeh, E.S. Semenova, K. Yvind and R.E. Dunin-Borkowski
Publisher: Elsevier BV
Year: 2011
DOI identifier: 10.1016/j.jcrysgro.2011.06.037
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Provided by: MUCC (Crossref)
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