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Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide

By D.C. Hanna, A.C. Large, D.P. Shepherd, A.C. Tropper, I. Chartier, B. Ferrand and D. Pelenc

Abstract

We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers

Topics: QC, TK
Year: 1993
OAI identifier: oai:eprints.soton.ac.uk:78501
Provided by: e-Prints Soton

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