Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi-level pinning, and Shockley–Read–Hall (SRH)/trap-assisted tunneling (TAT) cause unwanted leakage current. In this paper, we study these degradation mechanisms using the pulsed I-V technique. Our simulations show pulsed I-V can fully suppress oxide trap charging, unlike SRH and TAT. We discuss several circuit-related pitfalls, and we demonstrate improved transfer characteristics by suppressing oxide trap charging using cryogenic pulsed I-V.status: publishe

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oaioai:lirias2repo.kuleuv...Last time updated on 12/10/2019

This paper was published in Lirias.

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