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Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS

By Liudi Jiang, G. Lewis, S. M. Spearing, N. M. Jennett and M. Monclus

Abstract

Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature<br/>with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties<br/>of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si)<br/>commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated<br/>using a commonly available Si dry etching process. The promising material and process development<br/>suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials<br/>with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and<br/>ICs

Topics: TJ, TK, TA
Year: 2010
OAI identifier: oai:eprints.soton.ac.uk:79895
Provided by: e-Prints Soton
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