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Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications

By Otto L. Muskens, Silke L. Diedenhofen, Maarten H.M. van Weert, Magnus T. Borgström, Erik P.A.M. Bakkers and Jaime Gómez Rivas

Abstract

A novel class of optical metamaterials is presented consisting of high densities of aligned gallium phosphide (GaP) nanowires fabricated using metal-organic vapor phase-epitaxy. Starting from a gold island film as a catalyst for nanowire growth, a sequential combination of vapor-liquid-solid and lateral growth modes is employed to obtain a continuous tunability of the nanowire volume fraction from 7% to over 35%. By choosing different crystallographic orientations of the GaP substrate, metamaterials are designed with different nanowire orientations. The anisotropy of the nanowire building blocks results in strong optical birefringence. Polarization interferometry demonstrates a very large polarization extinction contrast of 4 × 103 combined with a sharp angular resonance which holds promise for optical sensing. Nanowire metamaterials may find applications in photonics, optoelectronics, non-linear and quantum optics, microfluidics, bio-, and gas sensing

Topics: QC
Year: 2008
OAI identifier: oai:eprints.soton.ac.uk:144333
Provided by: e-Prints Soton

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